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| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A 100 Volts 50 Amps 35 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features * * * * * * * Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ 25C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC MAX. 100 100 +/-20 +/-30 50 40 200 50 18.5 400 TBD 300 -55 to +150 -55 to +150 50 200 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts C C Amps Amps C/W Drain-to-Gate Breakdown Voltage @ TJ 25C, RGS= 1 M Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100C Tj= 25C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline DRAIN GATE SOURCE Datasheet# MSC0299A MSAEZ50N10A MSAFZ50N10A Electrical Parameters @ 25C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) SYMBOL BVDSS BVDSS/TJ VGS(th) IGSS IDSS RDS(on) CONDITIONS VGS = 0 V, I D = 250 A MIN 100 TYP. TBD MAX UNIT V V/C Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr VDS = VGS, ID = 1 mA VGS = 20V DC, VDS = 0 T J = 25C T J = 125C VDS =0.8*BVDSS TJ = 25C VGS = 0 V T J = 125C VGS= 10V, I D= 32A T J = 25C I D= 50A T J = 25C I D= 32A T J = 125C VDS 15 V; I D = 32 A VGS = 0 V, V DS = 25 V, f = 1 MHz 2.0 3.0 15 0.03 TBD 0.05 28 2400 730 430 33 140 500 230 225 20 100 1.6 4.0 100 200 25 250 0.035 V nA A S 3200 1100 650 50 210 670 310 pF VGS = 10 V, V DS = 30 V, ID = 3 A, R G = 50 ns VGS = 10 V, V DS = 80V, I D = 30A nC IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/ s, IF = 10 A, di/dt = 100 A/ s, MSAE MSAF MSAE MSAF MSAE MSAF 1.2 1.8 50 170 tbd 0.9 V ns C Notes (1) (2) Pulse test, t 300 s, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. |
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